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| SMD Type N-Channel 30-V (D-S) MOSFET KI1302DL Transistors IC Features 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 ) TA=25 -TA=70 Pulsed drain current Continuous source current (diode conduction) * Power dissipation * -TA=25 TA=70 Symbol VDS VGS ID IDM IS PD Tj,Tstg 0.26 0.31 0.20 -55 to +150 0.64 0.51 1.5 0.23 0.28 0.18 5 secs 30 20 0.60 0.48 Steady State Unit V V A A A W Operating junction and storage temperature range * Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 355 380 285 Maximum 400 450 340 /W Unit Steady State Steady State * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI1302DL Electrical Characteristics Ta = 25 Parameter Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Drain-source on-state resistance Forward transconductance Diode forward voltage Total gate charge * Gate-source charge * Gate-drain charge * Turn-on time Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr Turn-off time Source-Drain Reverse Recovery Time * Pulse test: PW 300 is duty cycle 2%. td(off) tf trr IF = 0.23 A, di/dt = 100 A/ s VDD = 15V , RL = 30 , ID =0.5A , VGEN =10V , RG = 6 VDS =15V ,VGS = 10 V , ID= 0.6A Testconditons VDS = VGS, ID = 250 VDS = 0 V, VGS = A 20 V Transistors IC Min 1 Typ Max Unit V 100 1 5 1.5 0.410 0.480 0.600 0.700 0.75 0.8 0.86 0.24 0.08 5 8 8 7 15 10 15 15 15 30 1.2 1.4 nA A A VDS = 24 V, VGS = 0 V VDS =24 V, VGS = 0 V, TJ = 70 VDS =5 V, VGS = 10 V VGS = 10 V, ID = 0.6 A VGS = 4.5V, ID = 0.2 A VDS = 15 V, ID = 0.6 A IS = 0.23 A, VGS = 0 V S V nC ns Marking Marking KA 2 www.kexin.com.cn |
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